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APT APTGT200SK120D3 IGBT Module

#APT, #APTGT200SK120D3, #IGBT_Module, #IGBT, APTGT200SK120D3 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT200SK120D3

· Categories: IGBT Module
· Manufacturer: APT
· Price: US$
· Date Code: 11+
. Available Qty: 49
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APTGT200SK120D3 Specification

Sell APTGT200SK120D3, #APT #APTGT200SK120D3 Stock, APTGT200SK120D3 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT200SK120D3, #IGBT_Module, #IGBT, #APTGT200SK120D3
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Manufacturer Part Number: APTGT200SK120D3Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Microsemi CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7JESD-609 Code: e0Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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