#APT, #APTGT200SK120D3, #IGBT_Module, #IGBT, APTGT200SK120D3 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; APTGT200SK120D3
Manufacturer Part Number: APTGT200SK120D3Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Microsemi CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7JESD-609 Code: e0Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7