#Microsemi Power Products Group, #ARF1511, #IGBT_Module, #IGBT, ARF1511 RF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semicondu
Manufacturer Part Number: ARF1511Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: SMALL OUTLINE, R-XDSO-F10Pin Count: 10ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.56Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 20 ADrain Current-Max (ID): 20 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-XDSO-F10JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 10Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1500 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TIN SILVER COPPERTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-10