Content last revised on January 18, 2026
BSM100GT120DN2: 1200V IGBT Module for High-Efficiency Motor Drives & Inverters
The Core Technology for Balanced Power Conversion
In modern power electronics, achieving an optimal balance between conduction and switching losses is a fundamental design challenge. System architects often face a trade-off: minimizing static losses can increase dynamic losses, and vice versa. The Infineon BSM100GT120DN2, a 1200V/100A IGBT module, directly addresses this challenge by integrating advanced silicon technology. At its heart are the TRENCHSTOP™ IGBT3 and a fast, soft-recovery Emcon HE free-wheeling diode. This pairing is not a mere combination of components; it's a co-engineered solution. The TRENCHSTOP™ technology creates a vertical structure with a field-stop layer, which significantly lowers the collector-emitter saturation voltage (VCE(sat)) without unduly compromising switching speed. The complementary Emcon HE diode is optimized for fast and "soft" reverse recovery, which minimizes voltage overshoots and electromagnetic interference (EMI) during commutation. This synergy makes the BSM100GT120DN2 an exemplary choice for frequency-controlled industrial applications where both high efficiency and operational robustness are paramount.
Key Specifications for Thermal-First Design
The performance of a power module is defined by its electrical and thermal characteristics. For the BSM100GT120DN2, these parameters are engineered to deliver reliable service under demanding industrial loads. A low VCE(sat) is crucial as it directly reduces the power lost as heat during the on-state. Similarly, a low thermal resistance (Rth) ensures that the heat generated at the silicon chip can be efficiently transferred to a heatsink, which is vital for long-term reliability as detailed in guides on unlocking IGBT thermal performance.
Download the Datasheet for complete specifications.
| IGBT Inverter Characteristics (Tj = 25 °C unless otherwise specified) | ||
|---|---|---|
| Parameter | Value | Notes |
| Collector-Emitter Voltage (VCE) | 1200 V | Provides significant margin for 400V/575V AC line applications. |
| Continuous Collector Current (IC @ 80°C) | 100 A | High current capability for mid-power range drives. |
| Collector-Emitter Saturation Voltage (VCE(sat) @ 100A, 125°C) | Typ. 3.0 V | Low conduction losses translate directly to higher system efficiency. |
| Diode Inverter Characteristics | ||
| Diode Forward Voltage (VF @ 100A, 125°C) | Typ. 2.5 V | Low forward drop in the freewheeling diode reduces losses during commutation. |
| Thermal and Mechanical Characteristics | ||
| Thermal Resistance, Junction-to-Case (RthJC, per IGBT) | ≤ 0.182 K/W | Excellent thermal transfer for effective heatsink design. |
| Insulation Test Voltage (Vis) | 2500 Vac (1 min) | Ensures robust isolation for safety and reliability. |
Deployment Snapshot: Enhancing VFD Uptime
A mid-sized manufacturing plant deployed the BSM100GT120DN2 in their 37kW variable frequency drives (VFDs) controlling conveyor belt systems. The primary goal was to reduce unscheduled downtime caused by thermal tripping in their previous-generation inverters. The lower overall losses of the BSM100GT120DN2 resulted in a cooler-running power stage, eliminating thermal faults even during peak summer temperatures. This improved operational reliability and reduced energy consumption, contributing to a lower total cost of ownership for the facility.
Selecting the Right Power Stage: BSM100GT120DN2 vs. Alternatives
Choosing the correct IGBT module involves matching device ratings to application requirements. The BSM100GT120DN2 is ideally suited for three-phase inverters in the 30-45 kW power range. For systems requiring higher power output but wishing to maintain the same package footprint and core technology, the BSM150GT120DN2 offers a direct upgrade path with a 150A current rating. This allows for platform-based design, where a single mechanical and thermal solution can be scaled across multiple product power levels, simplifying inventory and engineering efforts. When comparing against modules from other families, it's critical to analyze the trade-offs between VCE(sat) and switching energies (Eon/Eoff) at your target operating frequency, a topic explored further in our guide to decoding IGBT datasheets.
Frequently Asked Questions (FAQ)
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What is the primary advantage of the Emcon HE diode in the BSM100GT120DN2?
The Emcon HE (High Efficiency) diode is engineered for a "soft" reverse recovery characteristic. This means it transitions from a conducting to a blocking state smoothly, with reduced current and voltage oscillations. The engineering value is twofold: it lowers switching losses in the diode itself and significantly reduces electromagnetic interference (EMI), which can simplify system-level filtering and improve overall reliability by minimizing stress on the IGBT.
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What is the recommended gate drive voltage for the BSM100GT120DN2?
While the absolute maximum gate-emitter voltage is ±20V, the typical recommended gate drive voltage for TRENCHSTOP IGBT3 technology is +15V for turn-on and -8V to -15V for turn-off. Using a negative turn-off voltage provides a strong margin against parasitic turn-on induced by high dv/dt, enhancing noise immunity in electrically noisy environments like motor drives.
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Can the BSM100GT120DN2 modules be connected in parallel for higher current?
Yes, paralleling is a common practice. The BSM100GT120DN2 is suitable for parallel operation due to the positive temperature coefficient of its VCE(sat). This means that as a chip heats up, its on-state voltage increases, naturally encouraging current to share with cooler, parallel devices. However, successful paralleling requires careful attention to symmetrical busbar layout, gate drive circuit design, and thermal management to ensure balanced current sharing during both static and dynamic conditions.
Driving Industrial Efficiency Forward
The push for greater energy efficiency, mandated by global standards and driven by operational costs, places the inverter at the center of system performance. In industrial automation and motor control, the reliability of a drive is directly linked to production uptime and profitability. The BSM100GT120DN2 provides a strategic advantage by directly addressing these trends. Its low-loss characteristics support the development of systems compliant with high-efficiency motor standards (e.g., IE3/IE4). Its robust thermal performance and proven technology contribute to a longer operational lifespan, reducing the total cost of ownership (TCO) and supporting the goals of Industry 4.0 for reliable, connected, and efficient manufacturing.
A Closer Look at the IGBT and Diode Synergy
Think of the IGBT and its freewheeling diode as a synchronized relay team in a race. The IGBT runs its leg (the on-state), and the handoff to the diode (the freewheeling state) must be seamless. The Emcon HE diode in the BSM100GT120DN2 ensures this handoff is exceptionally smooth. Its soft recovery characteristic prevents the electrical "fumbling"—voltage spikes and ringing—that can occur with less-optimized diodes. This not only reduces EMI but also minimizes the stress on the IGBT when it's time for it to take over again. The IGBT itself, based on Infineon TRENCHSTOP™ IGBT3 technology, is designed for low conduction losses, meaning it runs more efficiently and generates less waste heat. The inclusion of a Kelvin Emitter pin provides a clean voltage reference for the gate driver, bypassing internal voltage drops and enabling more precise, faster switching control, which is critical for minimizing switching losses.
Powering a Spectrum of Industrial Conversion Systems
The balanced performance profile of the BSM100GT120DN2 makes it a versatile workhorse for a wide array of high-power switching applications. Its combination of efficiency, thermal stability, and robust construction ensures reliability in demanding environments.
- Variable Frequency Drives (VFDs): As the core of industrial VFDs, this module enables precise and efficient control of AC motors in pumps, fans, conveyors, and other automation equipment.
- Servo Drives: In robotics and CNC machinery, the module's fast and clean switching characteristics contribute to the high dynamic response required for precise motion control.
- Uninterruptible Power Supplies (UPS): Its reliability and high efficiency are critical for building UPS systems that protect data centers, medical facilities, and industrial processes from power disturbances.
- Solar Inverters: The module is well-suited for the DC-AC conversion stage in string or small central solar inverters, maximizing the energy harvested from photovoltaic arrays.
Ready to enhance your next power conversion design? Contact our technical specialists to discuss your application requirements or request a quote for the BSM100GT120DN2 today. Our team can help you leverage its capabilities to achieve your performance and reliability targets.
