#Rohm Semiconductor, #EM6M2T2R, #IGBT_Module, #IGBT, EM6M2T2R Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide
Manufacturer Part Number: EM6M2T2RPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 1.62Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 0.2 ADrain Current-Max (ID): 0.2 ADrain-source On Resistance-Max: 1.4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 0.15 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, EMT6, 6 PIN