#EUPEC, #FZ2400R12KF4, #IGBT_Module, #IGBT, FZ2400R12KF4 Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel; FZ2400R12KF4
Manufacturer Part Number: FZ2400R12KF4Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.56Case Connection: ISOLATEDCollector Current-Max (IC): 2400 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 15000 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel