#Microsemi HI-REL [MIL], #JANTXV2N2906AUB, #IGBT_Module, #IGBT, JANTXV2N2906AUB Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,; JANTXV2N2906AUB
Manufacturer Part Number: JANTXV2N2906AUBPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: SMALL OUTLINE, R-PDSO-N3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Microsemi CorporationRisk Rank: 1.56Collector Current-Max (IC): 0.6 ACollector-Emitter Voltage-Max: 60 VConfiguration: SINGLEDC Current Gain-Min (hFE): 50JESD-30 Code: R-PDSO-N3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.4 WQualification Status: QualifiedReference Standard: MIL-19500/291Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: NO LEADTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,