Content last revised on January 5, 2026
MG300Q2YS40 Description
GTR Module Silicon N Channel IGBT; N CHANNEL IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS); 300 Amp; 1200 Volt
Target_Applications
MG300Q2YS40 could be used in HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS
Features
High Input Impedance
High Speed :tf=0.5μs(Max.) trr=0.5μs(Max.)
Low Saturation Voltage:VCE(sat)=4.0V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case.
Outline : TOSHIBA2-109D2A (See page 3 for the device outline)
Weight :550g(Typ.)
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:1800W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 N·m
Weight :550g
