#Toshiba, #MG300Q1US11, #IGBT_Module, #IGBT, MG300Q1US11 IGBT: 300A1200V; MG300Q1US11
MG300Q1US11 Description MG300Q1US11, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications MG300Q1US11 1.03 lbs Target_Applications MG300Q1US11 could be used in High Power Switching Applications Motor Control Applications Features INSULATED GATE BIPOLAR TRANSISTOR IGBT: 300A1200V