MG300Q1US11 Description
GTR Module
Silicon N Channel IGBT
High Power Switching Applications
Motor Control Applications
Features
High input impedance
High speed: tq= 1.0μs (Max.) tπ=0.5μs (Max.)
Low saturation voltage: VcE (sat) = 2.7V (Max.)
Enhancement mode
The electrodes are isolated from case
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2~3 N·m
