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Toshiba MG50J1ZS40 IGBT Module

MG50J1ZS40

MG50J1ZS40 Toshiba grt module silicon channel IGBT

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$
· Date Code: 2024+
. Available Qty: 400
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MG50J1ZS40 Specification

MG50J1ZS40 Product details

HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
High Input Impedance
High Speed: tf=0.35μs(Max.) trr=0.15μs(Max.)
Low Saturation Voltage:VCE(sat)=3.5V(Max.)
Enhancement-Mode
The Electrodes are Isolated from Case.
EQUIVALENT CIRCUIT

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:250W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 N·m

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