#TOSHIBA, #MG30G2YL1, #IGBT_Module, #IGBT, MG30G2YL1 Power Bipolar Transistor, 30A I(C), 1-Element,; MG30G2YL1
Manufacturer Part Number: MG30G2YL1Part Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: ,Manufacturer: IXYS CorporationRisk Rank: 5.41Collector Current-Max (IC): 30 ADC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 200 WSubcategory: BIP General Purpose PowerVCEsat-Max: 2 V Power Bipolar Transistor, 30A I(C), 1-Element,