Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

TOSHIBA MG200Q2YS60A IGBT Module

#TOSHIBA, #MG200Q2YS60A, #IGBT_Module, #IGBT, MG200Q2YS60A Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MG200Q2YS60A

· Categories: IGBT Module
· Manufacturer: TOSHIBA
· Price: US$
· Date Code: 11+
. Available Qty: 60
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869
Tags:
-- OR --

Contact us for Price!

MG200Q2YS60A Specification

Sell MG200Q2YS60A, #TOSHIBA #MG200Q2YS60A Stock, MG200Q2YS60A Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MG200Q2YS60A, #IGBT_Module, #IGBT, #MG200Q2YS60A
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mg200q2ys60a.html

Manufacturer Part Number: MG200Q2YS60APart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X11Pin Count: 11Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X11Number of Elements: 2Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICON Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Latest Components
Mitsubishi