Toshiba MG600Q1US51 IGBT Module

MG600Q1US51 IGBT Description

High Power Switching Applications Motor Control Applications

. High input impedance

. High speed : tf = 0.3µs (Max)

                       @Inductive load

. Low saturation voltage: VCE (sat) = 3.6V (Max)

. Enhancement-mode

. Includes a complete half bridge in onepackage.

. The electrodes are isolated from case.

Collector-emitter voltage VCES 1200 V

Gate-emitter voltage VGES ±20 V

Collector current DC IC 600 A

Collector current 1ms ICP 1200 A

Forward current DC IF 600 A

Forward current 1ms IFM 1200 A

Collector power dissipation (Tc = 25°C) PC 4100 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −40 ~ 125 °C

Isolation voltage VIsol 2500(AC 1 minute) V

Screw torque (Terminal / mounting) ― 3 / 3 N·m