Toshiba MG600Q1US51 IGBT Module

MG600Q1US51 IGBT Description High Power Switching Applications Motor Control Applications . High input impedance . High speed : tf = 0.3µs (Max)                        @Inductive load . Low saturation voltage: VCE (sat) = 3.6V (Max) . Enhancement-mode . Includes a complete half bridge in onepackage. . The electrodes are isolated from case.  Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current DC IC 600 A Collector current 1ms ICP 1200 A Forward current DC IF 600 A Forward current 1ms IFM 1200 A Collector power dissipation (Tc = 25°C) PC 4100 W Junction temperature Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500(AC 1 minute) V Screw torque (Terminal / mounting) ― 3 / 3 N·m  High Power Switching Applications Motor Control Applications 600A/1200V