MG600Q2YMS3 Product details
Applications
• High-Power Switching
• Motor Controllers (including rail traction)
Features
(1) VDSS = 1200 V, ID = 600 A All SiC MOSFET Module(Low loss & High speed switching)
(2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in temperature sensor.
(3) Enhancement mode.
(4) Electrodes are isolated from case.
.Absolute maximum ratings (Tc=25°C unless without specified)
Drain-source voltage VDSS 1200V
Gate-source voltage VGSS + 25/- 10V
Drain curent (DC) ID 600A
Drain current (pulsed) IDP 1200A
Drain power dissipation PD 2000W
Source current (DC) IS 600A
Source current (pulsed) ISP 1200A
Channel temperature Tch 150°C
Storage temperature Tstg -40~150°C
Isolation voltage Visol 4000V
Mounting screw torque M5 3.5 N·m
