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Toshiba MG75J6ES53 IGBT Module

MG75J6ES53 Toshiba high power IGBT Module 600V 75A

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 61
· Date Code: 2024+
. Available Qty: 450
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MG75J6ES53 Specification

HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.
●The Electrodes are Isolated from Case.
●High Input Impedance.
●6 IGBTs Built Into 1 Package. .
●Enhancement-Mode.
●High Speed : tf=0.3Oμs (Max.) (Ic= 75A)
trr=0.15pμs (Max.) (p=75A)
●Low Saturation Voltage: VCE (sat)=2.70V (Max.) (Ic=75A)

Maximum ratings and characteristics

  • Collector-Emitter Voltage (VCES): 600V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Current (DC): 75A
  • Collector Current (1ms pulse): 150A
  • Forward Current (1ms pulse): 150A
  • Collector Power Dissipation (Pc) at Tc = 25°C: 390W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature Range (Tstg): -40°C to 125°C
  • Isolation Voltage (VIsol) (AC for 1 minute): 2500V
  • Screw Torque (Terminal/Mounting): 2/3 Nm
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