TOSHIBA MG600Q1US59A

  • MG600Q1US59A

MG600Q1US59A Mitsubishi Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

· Categories: IGBT
· Manufacturer: TOSHIBA
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 379
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Content last revised on April 17, 2025

FEATURE
●The electrodes are isolated from case.
●Enhancement-mode
●Integrates fault-signal output circuit in package.
(Short-Circuit and Over-Current)

MAXIMUM RATINGS(Ta = 25°C)
VCES Collector-Emitter Voltage 1200V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc= 25°C 600A
±ICP Collector Current (Peak) TC= 25°C 1200A
PC Collector Dissipation TC= 25°C 2750W
Tj Junction Temperature -20~+150°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 3.0 N·m

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