#TOSHIBA, #MG600Q1US59A, #IGBT_Module, #IGBT, MG600Q1US59A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MG600Q1US59A
Manufacturer Part Number: MG600Q1US59APart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Mitsubishi ElectricRisk Rank: 5.81Additional Feature: UL RECOGNISEDCase Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2750 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1300 nsTurn-on Time-Nom (ton): 300 nsVCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7