Toshiba MG100Q2YS51 New Stock

N CHANNEL IGBT (HIGH PWER SWITCHING; MOTOR CONTROL APPLICATIONS);
Collector-emitter voltage VCES:1200 V
Gate-emitter voltage VGES:±20 V
Collector current DC IC (25°C / 80°C) 150 / 100A
Collector current 1ms ICP (25°C / 80°C) 300 / 200A
Forward current DC IF:100A
Forward current 1ms IFM 200A
Collector power dissipation (Tc = 25°C) PC:660 W
Junction temperature Tj:150 °C
Storage temperature range Tstg:−40 ~ 125 °C
Isolation voltage VIsol 2500 (AC 1 min.) V
Screw torque (Terminal / mounting) ― 3 / 3 N·m
Gate leakage current IGES VGE = ±20V, ±500 nA