#Toshiba, #MG100Q2YS51, #IGBT_Module, #IGBT, MG100Q2YS51 High Power Switching Applications Motor Control Applications 100A/1200V/IGBT/2U; MG100Q2YS51
MG100Q2YS51 Description N CHANNEL IGBT (HIGH PWER SWITCHING; MOTOR CONTROL APPLICATIONS); Collector-emitter voltage VCES:1200 V Gate-emitter voltage VGES:±20 V Collector current DC IC (25°C / 80°C) 150 / 100A Collector current 1ms ICP (25°C / 80°C) 300 / 200A Forward current DC IF:100A Forward current 1ms IFM 200A Collector power dissipation (Tc = 25°C) PC:660 W Junction temperature Tj:150 °C Storage temperature range Tstg:−40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 min.) V Screw torque (Terminal / mounting) ― 3 / 3 N·m Gate leakage current IGES VGE = ±20V, ±500 nA High Power Switching Applications Motor Control Applications 100A/1200V/IGBT/2U