Toshiba MG75Q2YS42 IGBT Module

The Toshiba MG75Q2YS42 is an N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high power switching and motor control applications.

MG75Q2YS42 can handle maximum collector current 75A and collector emitter voltage 1200V.

This module includes an ultra-soft fast recovery diode (USFD) that helps reduce noise and features an isolated heat sink (terminal to base) for safety.

The ABSOLUTE MAXIMUM RATINGS for the MG75Q2YS42

include collector power dissipation of 560W, the junction temperature range of -40 ~ 150°C.

The module has isolation voltage 2500 VRMS (AC 1 minute) and screw torque terminals of 3/3 N.m.

Toshiba #MG75Q2YS42 Description

MG75Q2YS42 N CHANNEL IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS); 75 Amp; 1200 Volt; GTR module; IGBT. Motor Control Application.

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling  diode - ultra soft fast recovery diode(USFD).

* Isolated head sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25°C )

Collector Emitter Voltage VCES 1,200V

Gate Emitter Voltage VGES  ±20V

Collector Current DC IC 75A

Collector Current DC ICp 150A

Collector Power Dissipation Pc 560W

Junction Temperature Tj -40 ~ 150°C

Storage Temperature Tstg -40 ~125°C

Isolation Voltage VISO 2,500 VRMS(AC 1 minute)

Screw Torque Terminals 3/3 N.m

IGBT (HIGH POWER SWITCHING; MOTOR CONTROL APPLICATIONS) 75 Amp; 1200 Volt; GTR module; IGBT. Motor Control Application.