#IXYS, #MWI100_12T8T, #IGBT_Module, #IGBT, MWI100-12T8T Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-35; MWI100-12T8T
Manufacturer Part Number: MWI100-12T8T
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Package Description: FLANGE MOUNT, R-XUFM-X21
Pin Count: 35
Manufacturer: IXYS Corporation
Risk Rank: 5.64
Additional Feature: UL RECOGNIZED
Case Connection: ISOLATED
Collector Current-Max (IC): 145 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X21
Number of Elements: 6
Number of Terminals: 21
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 480 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-35