Fuji Electric 2MBI450VH-120-50 | High-Speed 1200V V-Series IGBT for Demanding Power Conversion
The Fuji Electric 2MBI450VH-120-50 is an engineered solution for power electronics designers who require a combination of high-speed performance, exceptional reliability, and thermal efficiency. As part of Fuji's renowned V-Series, this 1200V, 450A half-bridge IGBT module is specifically designed to excel in high-frequency applications where minimizing losses is not just a goal, but a system-level necessity.
Product Highlights Overview
This module isn't just a collection of specifications; it's a carefully balanced design that delivers tangible engineering advantages. For the system designer, this translates to:
- High-Speed Switching: Optimized for operating frequencies up to 20kHz, enabling smaller magnetic components and higher power density.
- Low Conduction and Switching Losses: Utilizes Fuji's 6th Generation V-Series Trench Gate and Field-Stop (FS) technology to achieve an optimal balance between low VCE(sat) and reduced switching energy (Eon, Eoff).
- Superior Thermal Performance: The module's construction, featuring an AlN substrate, ensures low thermal resistance, facilitating efficient heat extraction and improving overall system reliability.
- Robustness and Reliability: Characterized by a wide Reverse Bias Safe Operating Area (RBSOA) and a high short-circuit withstand time, providing critical protection during fault conditions.
Technical Deep Dive: The V-Series Advantage
The performance of the 2MBI450VH-120-50 is rooted in its advanced semiconductor design. The core of this module is the Fuji Electric V-Series IGBT chip technology. This represents a significant leap from previous generations by combining a fine-patterned trench gate structure with a thin-wafer field-stop layer. This synergy achieves two critical engineering outcomes:
Key Parameters at a Glance
For detailed specifications and characteristic curves, designers should consult the official datasheet. For a quick reference, here are the critical parameters for the Fuji Electric 2MBI450VH-120-50.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic) @ Tc=80°C | 450A |
| Collector-Emitter Saturation Voltage (VCE(sat)) Typ. @ Ic=450A | 1.75V |
| Turn-On Switching Energy (Eon) Typ. | 68 mJ |
| Turn-Off Switching Energy (Eoff) Typ. | 80 mJ |
| Thermal Resistance (Rth(j-c)) IGBT | 0.063 °C/W |
| Short-Circuit Withstand Time (tsc) | ≥ 10µs |
For a comprehensive understanding of the module's capabilities, download the official 2MBI450VH-120-50 datasheet.
Application Scenarios & Engineering Value
This module's specific characteristics make it a prime candidate for several high-power, high-frequency systems:
- Induction Heating & Welding: The fast switching and low losses are critical for resonant converter topologies used in induction heating. The module's robust thermal design can handle the demanding, cyclical loads typical of welding power supplies.
- High-Power UPS Systems: In enterprise-level Uninterruptible Power Supplies, efficiency is key to reducing operational costs (OPEX). The low VCE(sat) of this module directly translates to lower energy consumption and reduced cooling requirements for the overall system.
- General Purpose & Motor Drives: While optimized for speed, its high current rating and robust build make it a formidable choice for high-power inverters and motor drives where reliability and performance are non-negotiable.
Frequently Asked Questions (FAQ)
Q1: What are the key considerations for the gate drive design for the 2MBI450VH-120-50?
A: Given its high-speed characteristics, a well-designed gate drive is crucial. We recommend a drive circuit capable of providing +15V for turn-on and a negative voltage (e.g., -8V to -15V) for turn-off to ensure immunity against dV/dt induced turn-on. Minimizing the inductance in the gate drive loop by using twisted-pair wires and keeping the driver close to the module is essential for clean switching and preventing oscillations.
Q2: Can these modules be paralleled for higher current output?
A: Yes, the 2MBI450VH-120-50 can be paralleled. Fuji V-Series IGBTs exhibit a positive temperature coefficient for VCE(sat), which aids in thermal balancing between paralleled modules. However, successful paralleling requires careful attention to symmetrical layout in the power bus bars to ensure equal current sharing and synchronized gate drive signals to prevent dynamic imbalances. Careful consideration of the overall thermal performance is also paramount.
