Content last revised on November 12, 2025
Fuji Electric 2MBI1400VXB-170E-50 | High-Power V-Series IGBT for Megawatt-Scale Systems
The Fuji Electric 2MBI1400VXB-170E-50 is a high-power IGBT module engineered for the most demanding power conversion applications. As a cornerstone of Fuji's 6th Generation V-Series, this device is not merely a component but a strategic asset for developing highly efficient and reliable megawatt-scale systems. It is purpose-built for applications where power density, thermal performance, and long-term reliability are non-negotiable.
Technical Deep Dive: The V-Series Advantage
The performance of the 2MBI1400VXB-170E-50 is rooted in Fuji Electric's advanced V-Series chip technology. This represents a significant leap forward in power semiconductor design, addressing the core engineering challenges of minimizing losses and enhancing durability.
- Optimized Trench Gate & Field-Stop Structure: Unlike older planar gate designs, the V-Series employs a refined trench gate structure. This dramatically reduces the on-state voltage, or VCE(sat), to a typical value of 2.10V at 1400A. For system architects, this translates directly into lower conduction losses, reducing the thermal load on the cooling system and improving overall inverter efficiency.
- Soft Switching Characteristics: The module is engineered for "soft" turn-off behavior. This controlled switching minimizes voltage overshoots and high-frequency EMI emissions, simplifying the design of snubber circuits and EMC filtering. This is a critical advantage in high-power systems where managing electromagnetic interference is a significant design challenge.
- Enhanced Thermal Cycling Capability: The module's internal construction, featuring an Al-SiC baseplate and advanced soldering techniques, is designed to withstand extreme thermal cycling. This enhances the operational lifetime, a crucial factor in applications like wind turbines and large-scale solar inverters where maintenance is costly and uptime is paramount. Understanding why thermal resistance matters is key to leveraging this capability.
Key Parameter Overview
The following table outlines the critical electrical and thermal specifications that define the operational envelope of the Fuji Electric 2MBI1400VXB-170E-50. For comprehensive data, including characteristic curves and SOA graphs, please refer to the official datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1700V |
| Continuous Collector Current (Ic @ Tc=80°C) | 1400A |
| Collector-Emitter Saturation Voltage (Vce(sat) typ. @ Ic=1400A) | 2.10V |
| Total Power Dissipation (Pc) | 9370W |
| Operating Junction Temperature (Tj op) | -40°C to +150°C |
| Thermal Resistance (Rth(j-c) IGBT) | 0.0134 °C/W |
| Package Type | M235 (High Power Module) |
For detailed specifications, download the official Fuji 2MBI1400VXB-170E-50 datasheet.
Application Scenarios & Engineering Value
The robust specifications of this module make it an ideal choice for a range of high-power industrial and renewable energy applications.
- Wind Turbine Converters: The module's high current rating and exceptional thermal cycling capability ensure reliable operation in the demanding, variable-load environment of wind-to-grid power conversion systems.
- Large-Scale Solar Inverters: In central solar inverters, the low Vce(sat) maximizes energy harvest by minimizing conversion losses, directly improving the Levelized Cost of Energy (LCOE).
- High-Power Motor Drives: For industrial drives controlling multi-megawatt motors in applications like mining, marine propulsion, or heavy manufacturing, the 2MBI1400VXB-170E-50 provides the necessary power handling and robustness for precise and efficient motor control.
Frequently Asked Questions (FAQ)
Our engineers often receive questions about implementing high-power IGBT modules. Here are two common queries regarding the 2MBI1400VXB-170E-50:
1. How critical is the gate driver design for this module?
Extremely critical. For a 1700V/1400A module, a robust gate driver is essential for ensuring reliability and achieving optimal switching performance. Key considerations include providing a stable +15V/-15V gate voltage, high peak gate current capability (typically >10A) to quickly charge and discharge the large input capacitance, and a Miller clamp function to prevent parasitic turn-on during high dv/dt events. A poorly designed gate drive can lead to increased switching losses, ringing, or even catastrophic failure.
2. Can these modules be paralleled for higher current output?
Yes, the Fuji Electric V-Series IGBT is designed with characteristics suitable for paralleling. The positive temperature coefficient of Vce(sat) ensures a degree of self-balancing for thermal runaway. However, successful paralleling requires careful attention to layout symmetry in both the power path (busbars) and gate drive circuitry to ensure current sharing is as equal as possible. Any imbalance can cause one module to carry a disproportionate share of the current, leading to premature failure. For designs requiring higher power, please contact our technical team to discuss best practices.
