2MBI150VB-120-50 Fuji Electric 1200V 150A IGBT Module

2MBI150VB-120-50 IGBT Module In-stock / Fuji Electric: 1200V 150A High-speed. 90-day warranty, motor drive. Global fast shipping. Check stock online.

· Categories: Discrete Power Device
· Manufacturer: Fuji Electric
· Price: US$ 56 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 423
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on March 15, 2026

Fuji Electric 2MBI150VB-120-50 | A Robust 1200V/150A IGBT for High-Reliability Power Conversion

The Fuji Electric 2MBI150VB-120-50 is a high-performance IGBT module engineered for demanding power conversion applications. As a cornerstone of Fuji's renowned 6th generation V-Series IGBT technology, this module delivers an exceptional balance of low power loss, high reliability, and robust operation, making it a premier choice for system designers focused on efficiency and longevity.

  • Voltage and Current Rating: 1200V / 150A
  • Configuration: 2-in-1 (Half-Bridge)
  • Core Technology: Trench Gate and Field-Stop (FS) Structure
  • Key Applications: High-performance motor drives, uninterruptible power supplies (UPS), servo amplifiers, and welding equipment.

Technical Deep Dive: The V-Series Advantage

The performance of the 2MBI150VB-120-50 is rooted in its advanced semiconductor design. It leverages Fuji Electric's V-Series Trench Gate and Field-Stop (FS) technology to achieve superior electrical characteristics. Unlike older planar gate structures, the trench gate design creates a vertical current path, significantly reducing the on-state voltage drop (VCE(sat)). This directly translates to lower conduction losses, which is a critical factor in high-current applications. The result is less heat generation and improved overall system efficiency.

Furthermore, the integrated Free Wheeling Diode (FWD) is optimized for soft and fast-recovery performance. This minimizes voltage overshoots and oscillations during turn-off, which not only reduces switching losses but also simplifies the design of snubber circuits and lowers electromagnetic interference (EMI). This synergy between the IGBT chip and the FWD ensures robust performance even under challenging, high-frequency switching conditions typical in modern power systems.

Application Scenarios & Engineering Value

The features of the Fuji Electric 2MBI150VB-120-50 provide tangible benefits across several key industrial applications:

  • Motor and Servo Drives: In applications like robotic servo drives and variable frequency drives (VFDs), precise control and high efficiency are paramount. The module's low Vce(sat) reduces heat dissipation in the inverter, allowing for more compact heatsink designs or higher power output from a given footprint. Its fast-switching capability enables higher PWM frequencies, leading to reduced motor noise and improved torque control.
  • Uninterruptible Power Supplies (UPS): Reliability is non-negotiable in UPS systems. The robust V-Series design and high short-circuit withstand time provide a wide Safe Operating Area (SOA), protecting the system against fault conditions. The module's high efficiency reduces the cooling requirements and operating costs of the UPS over its lifetime.
  • Welding Power Supplies: The dynamic performance required in welding is perfectly met by this module. Its ability to handle high pulsed currents and switch rapidly ensures stable arc characteristics and precise energy delivery for high-quality welds.

Key Technical Specifications

Below is a summary of the critical parameters for design engineers. For a comprehensive overview, please Download the 2MBI150VB-120-50 Datasheet.

Parameter Value
Collector-Emitter Voltage (Vces) 1200V
Continuous Collector Current (Ic) @ Tc=80°C 150A
Collector-Emitter Saturation Voltage (Vce(sat)) @ Ic=150A, Tj=125°C 1.80V (Typ) / 2.20V (Max)
FWD Forward Voltage (Vf) @ If=150A, Tj=125°C 1.80V (Typ) / 2.20V (Max)
Total Power Dissipation (Pc) per IGBT 780W
Operating Junction Temperature (Tj(op)) +150°C
Short-Circuit Withstand Time (tsc) ≥ 10µs

Engineer's FAQ

1. How does the 2-in-1 (half-bridge) configuration benefit my design?
The half-bridge topology is a fundamental building block for 3-phase inverters. By integrating two IGBTs and two FWDs into a single module, the 2MBI150VB-120-50 simplifies the power stage layout, reduces parasitic inductance associated with external wiring, and streamlines assembly. This leads to a more compact, reliable, and electrically cleaner inverter design.

2. What are the key considerations for the thermal design when using this module?
Effective thermal management is crucial. The datasheet provides a low thermal resistance from junction to case (Rth(j-c)). Engineers must ensure a low-resistance thermal path from the module's baseplate to the heatsink using a quality thermal interface material (TIM). Calculating total power loss (conduction + switching) based on your specific operating frequency and load current will determine the required heatsink performance to keep the junction temperature well below the 150°C maximum.

For detailed selection advice or to discuss how the 2MBI150VB-120-50 can enhance your next project, please contact our technical team to explore our full range of IGBT modules.

More from Fuji Electric

Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric