Content last revised on November 12, 2025
ETN36-030 IGBT | Robust NPT Technology for High-Reliability Power Systems
The ETN36-030 is a high-performance Insulated Gate Bipolar Transistor (IGBT) engineered for durability and reliability in demanding power conversion applications. Leveraging proven Non-Punch-Through (NPT) technology, this device delivers a superior balance of performance, ruggedness, and cost-effectiveness for designers building robust power stages.
At a Glance: Core Strengths
- Robust NPT Technology: Offers an exceptionally wide Safe Operating Area (SOA) and high short-circuit withstand capability, critical for applications with unpredictable load conditions.
- Optimized Ratings: With a collector-emitter voltage (V_CES) of 330V and a continuous collector current (I_C) of 15A (at T_c=100°C), it's perfectly suited for low-to-mid power applications.
- Excellent Paralleling Capability: Features a positive temperature coefficient for its saturation voltage (V_CE(sat)), ensuring natural current sharing when devices are paralleled for higher power output.
- Application Versatility: An ideal building block for industrial motor drives, switch-mode power supplies (SMPS), and welding power systems where reliability is non-negotiable.
Key Technical Specifications
For a detailed breakdown of all electrical and thermal characteristics, you can download the complete ETN36-030 datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 330 V |
| Collector Current (I_C) at T_c=100°C | 15 A |
| Gate-Emitter Voltage (V_GES) | ±20 V |
| Collector-Emitter Saturation Voltage (V_CE(sat)) at I_C=15A | 1.8 V (Typ.) / 2.2 V (Max.) |
| Short Circuit Withstand Time (t_sc) | 10 µs |
| Package Type | TO-247 |
Engineering Insight: The Value of NPT Technology in the ETN36-030
While newer trench-gate technologies often focus on minimizing conduction losses, the NPT technology employed in the ETN36-030 prioritizes operational toughness. This design philosophy provides distinct advantages:
- Inherent Ruggedness: NPT IGBTs are constructed with a thicker n-drift region compared to punch-through or field-stop designs. This structure directly contributes to a wider Safe Operating Area (SOA), making the device significantly more tolerant to over-voltage and over-current conditions that can occur during load switching or fault events.
- Simplified Paralleling: The positive temperature coefficient of the VCE(sat) is a key feature for system scalability. As a device heats up, its on-state resistance increases slightly, naturally forcing current to balance with cooler, parallel devices. This prevents thermal runaway in a single IGBT and eliminates the need for complex current-sharing circuitry, reducing both cost and potential points of failure. For a deeper understanding of failure modes, explore our guide on preventing IGBT failures.
Application Sweet Spots: Where the ETN36-030 Excels
The unique characteristics of the ETN36-030 make it a superior choice for specific applications where long-term reliability outweighs the need for ultra-high switching frequencies.
- Industrial Motor Drives: For fractional horsepower motors in conveyors, pumps, and fans, the ETN36-030 provides a robust and cost-effective power switching solution. Its toughness is invaluable in industrial environments with fluctuating line voltages.
- Switch-Mode Power Supplies (SMPS): In hard-switching topologies, the wide SOA provides a crucial safety margin against transient events, enhancing the overall lifetime and reliability of the power supply.
- Welding Power Supplies: Welding is an extreme application characterized by repeated, momentary short-circuit conditions. The ETN36-030’s documented 10µs short-circuit withstand time makes it an excellent candidate for the output stage of these demanding systems.
Design Decision: ETN36-030 vs. Modern Alternatives
Choosing the right power switch is a critical design decision. Here’s how the ETN36-030 stacks up against other options:
Versus Trench Field-Stop (TFS) IGBTs: Modern TFS IGBTs typically offer lower V_CE(sat) and faster switching speeds, making them ideal for high-efficiency, high-frequency designs like solar inverters. However, the ETN36-030 often provides a more robust and cost-effective solution for lower-frequency (<20 kHz) hard-switching applications where ruggedness is the primary concern.
Versus Integrated Power Modules (PIMs): A PIM offers a compact, all-in-one solution that can simplify design and assembly. However, using discrete components like the ETN36-030 offers unparalleled design flexibility. It allows engineers to create custom PCB layouts, optimize thermal management for specific enclosures, and potentially achieve a lower bill-of-materials cost in high-volume production.
Engineer's FAQ for the ETN36-030
Can I use this IGBT for high-frequency switching above 50 kHz?
It is not recommended. NPT technology inherently has higher switching losses (E_on and E_off) compared to newer technologies. The ETN36-030 performs optimally in applications operating at or below 20 kHz. For higher frequencies, a Trench-FS IGBT or a power MOSFET would be a more suitable choice. Our guide on power semiconductor selection can provide more context.
What are the gate drive requirements for this NPT IGBT?
The ETN36-030 is relatively straightforward to drive. A standard gate voltage of +15V is recommended for full enhancement and low V_CE(sat). While a 0V turn-off is feasible, using a negative gate voltage (e.g., -5V to -15V) is best practice to provide a strong defense against noise-induced parasitic turn-on, further enhancing system reliability.
