Fuji 1MBI400NP-120-01 | Robust 1200V High-Power IGBT for Industrial Drives
The Fuji 1MBI400NP-120-01 is an N-Series Insulated Gate Bipolar Transistor (IGBT) module engineered as a high-power switching workhorse. Designed for applications demanding uncompromising reliability and thermal stability, this single IGBT module provides a robust foundation for inverters and power converters operating in harsh industrial environments. Its combination of high voltage and current ratings in an industry-standard package makes it a premier choice for new designs and legacy system upgrades.
- High Power Density: Delivers a continuous current of 400A with a blocking voltage of 1200V, ideal for high-power motor control and power conversion.
- Optimized Switching Performance: Features Fuji's N-Series Trench Gate Field-Stop technology to balance low conduction losses with efficient, high-speed switching, minimizing overall energy dissipation.
- Proven Reliability: Built with a focus on durability, offering excellent short-circuit withstand capability and thermal cycling endurance for long service life.
- Design Flexibility: Housed in a standard M222 package, simplifying thermal management, heatsink integration, and mechanical layout in power electronic assemblies.
Key Parameter Overview
The following specifications represent the core performance characteristics of the 1MBI400NP-120-01, providing engineers with the essential data for system design and simulation. For a complete list of parameters, electrical characteristics, and performance curves, please Download the Fuji 1MBI400NP-120-01 Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic) @ Tc=80°C | 400A |
| Pulsed Collector Current (Icp) | 800A |
| Collector-Emitter Saturation Voltage (Vce(sat)), typ. @ Ic=400A | 2.7V |
| Max. Junction Temperature (Tj max) | 150°C |
| Thermal Resistance, Junction to Case (Rth(j-c)) | 0.085 °C/W |
| Short-Circuit Withstand Time (tsc) | 10µs |
Technical Deep Dive: Engineering for Efficiency and Durability
The performance of the Fuji 1MBI400NP-120-01 is rooted in its sophisticated silicon design. The N-Series Trench Gate Field-Stop (FS) architecture creates a superior balance between on-state and switching losses. The trench gate structure allows for a higher channel density, which helps lower the on-state resistance and the collector-emitter saturation voltage (VCE(sat)). Simultaneously, the Field-Stop layer is engineered to truncate the turn-off tail current, significantly reducing switching energy loss (Eoff). This synergy is critical in applications like high-frequency inverter ACs where both types of losses contribute to overall system temperature.
While newer generation IGBTs may advertise lower Vce(sat) values, the 2.7V typical rating of this module indicates a design optimized for a wide Safe Operating Area (SOA). This ruggedness is indispensable for surviving the overcurrent and short-circuit events common in industrial motor drives, providing a layer of inherent protection that enhances system longevity.
Core Application Scenarios
The robust electrical and thermal characteristics of this IGBT module make it a versatile component for a range of demanding power conversion tasks.
- Variable Frequency Drives (VFDs): Its high current rating (400A) and 1200V breakdown voltage are ideal for the main inverter stage of three-phase motor drives powering heavy machinery, pumps, and fans.
- Uninterruptible Power Supplies (UPS): In large-scale commercial and industrial UPS systems, the module's reliability and strong thermal performance ensure continuous, stable power delivery to critical infrastructure.
- Welding Power Supplies: The ability to handle a high pulsed current (800A) makes the 1MBI400NP-120-01 an excellent switch for high-frequency inverter-based welding systems, enabling precise control and high-quality welds.
Frequently Asked Questions
1. What is the primary advantage of using a single IGBT module like this over an integrated Power Integrated Module (PIM)?A single IGBT module provides maximum design flexibility. It allows engineers to create custom busbar layouts, optimize the placement of the freewheeling diode for thermal management, and fine-tune the gate drive circuit for specific switching characteristics. This is ideal for bespoke or high-performance systems where layout optimization is key to minimizing stray inductance and improving efficiency.
2. What are the key considerations when paralleling these modules for higher power output?When paralleling IGBT modules, ensuring balanced current sharing is critical. This requires a symmetrical PCB and busbar layout to equalize stray inductances in each branch. Additionally, using IGBTs from the same manufacturing batch helps match Vce(sat) and threshold voltage characteristics. A well-designed gate drive with individual gate resistors for each module is essential for preventing oscillations and ensuring simultaneous switching. For a deeper understanding of potential issues, reviewing common causes of IGBT failure is recommended.
For application-specific design support or to discuss your power requirements, please contact our technical team.
