Mitsubishi PM50CLA120 IGBT Module

PM50CLA120 Description FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, whichperformance is improved by 1μm fine rule process.For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection ofCSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM. c) New small packageReduce the package size by 10%, thickness by 22% fromS-DASH series. • 3φ 50A, 1200V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo availablefrom upper arm devices) • Acoustic noise-less 5.5kW/7.5kW class inverter application Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:50A Collector current Icp:100A Collector power dissipation Pc:480W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 2.5~3.5 N·m Weight Typical value 380g