Fairchild Semiconductor TIP112 IGBT Module

Manufacturer Part Number: TIP112Rohs Code: NoPart Life Cycle Code: TransferredIhs Manufacturer: MOTOROLA INCPackage Description: FLANGE MOUNT, R-PSFM-T3HTS Code: 8541.29.00.95Manufacturer: Motorola Semiconductor ProductsRisk Rank: 8.58Additional Feature: LEADFORM OPTIONS ARE AVAILABLECase Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Base Capacitance-Max: 100 pFCollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 500JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 50 WPower Dissipation-Max (Abs): 50 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: AMPLIFIERTransistor Element Material: SILICONTransition Frequency-Nom (fT): 25 MHzVCEsat-Max: 2.5 V Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin