Mitsubshi PM75CLA060 IGBT Module

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which

performance is improved by 1μm fine rule process.

For example, typical Vce(sat)=1.5V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.

c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.

•3φ 75A, 600V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage (P-Fo available

from upper arm devices)

• Acoustic noise-less 5.5kW/7.5kW class inverter application

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:75A

Collector current Icp:150A

Collector power dissipation Pc:297W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.5~3.5 N·m

Weight Typical value 380g