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Toshiba 100L6P41 IGBT Module

Silicon diffused type rectifier module 6DIO 100A 800V

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 18
· Date Code: 2025+
. Available Qty: 430
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Tags: toshiba

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100L6P41 Specification

100L6P41 Description

100L6P41  Toshiba  Powe  Module

Three phase full wave bridge applications.

Features:

. Repetitive peak reverse voltage : Vrrm=800V

. Average output rectified current Tc=100°C Io= 100A

. Isolation voltage: 100L6p41-2000V AC

. Plastic mold package

Peak one cycle surge forward current(Non-repetitive) Ifsm 1000(50Hz)A

junction temperature Tj:-40~+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M5 20 kg·cm

Isolation Voltage (AC, t=60sec) Visol 2500V

Peak forwerd voltage Vfm IFM=100A 1.2V

Repetitive peak reverse current Irrm Vrrm=rated, Tj=150°C 5 mA

Thermal resistance DC(total) 0.22 °C/W

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