#Microsemi Corporation , #1N5712, #IGBT_Module, #IGBT, 1N5712 Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2; 1N5712
Manufacturer Part Number: JANTX1N5712-1Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: DO-35Package Description: O-LALF-W2Pin Count: 2ECCN Code: EAR99HTS Code: 8541.10.00.70Manufacturer: Microsemi CorporationRisk Rank: 1.81Additional Feature: METALLURGICALLY BONDEDCase Connection: ISOLATEDConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEJEDEC-95 Code: DO-35JESD-30 Code: O-LALF-W2JESD-609 Code: e0Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -65 °COutput Current-Max: 0.075 APackage Body Material: GLASSPackage Shape: ROUNDPackage Style: LONG FORMPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: QualifiedReference Standard: MIL-19500/444Surface Mount: NOTechnology: SCHOTTKYTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: AXIALTime Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2