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Microsemi Corporation  1N5712 IGBT Module

#Microsemi Corporation , #1N5712, #IGBT_Module, #IGBT, 1N5712 Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2; 1N5712

· Categories: IGBT Module
· Manufacturer: Microsemi Corporation 
· Price: US$
· Date Code: 2015+
. Available Qty: 3790
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1N5712 Specification

Sell 1N5712, #Microsemi Corporation  #1N5712 Stock, 1N5712 Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2; 1N5712, #IGBT_Module, #IGBT, #1N5712
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Manufacturer Part Number: JANTX1N5712-1Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: DO-35Package Description: O-LALF-W2Pin Count: 2ECCN Code: EAR99HTS Code: 8541.10.00.70Manufacturer: Microsemi CorporationRisk Rank: 1.81Additional Feature: METALLURGICALLY BONDEDCase Connection: ISOLATEDConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEJEDEC-95 Code: DO-35JESD-30 Code: O-LALF-W2JESD-609 Code: e0Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -65 °COutput Current-Max: 0.075 APackage Body Material: GLASSPackage Shape: ROUNDPackage Style: LONG FORMPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: QualifiedReference Standard: MIL-19500/444Surface Mount: NOTechnology: SCHOTTKYTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: AXIALTime Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

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