#Toshiba , #25G4B42, #IGBT_Module, #IGBT, 25G4B42 DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode; 25G4B42
Manufacturer Part Number: 25G4B42Part Life Cycle Code: ActiveIhs Manufacturer: Toshiba CORPPackage Description: S-PUFM-D4HTS Code: 8541.10.00.80Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.76Case Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 1 VJESD-30 Code: S-PUFM-D4Non-rep Pk Forward Current-Max: 400 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 25 APackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: FLANGE MOUNTQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 400 VReverse Current-Max: 0.00001 µASurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode