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2DI150M-120 Fuji Electric 1200V 150A IGBT Module

2DI150M-120 IGBT Module In-stock / Fuji Electric: 1200V 150A. Dual Darlington. 90-day warranty, motor control. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price: US$ 25 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 59
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on August 4, 2026

Fuji Electric 2DI150M-120 Power Transistor Module: High-Reliability Dual Darlington for Industrial Control

The 2DI150M-120 dual-transistor power control module delivers 1200V blocking voltage and 150A current handling with optimized thermal paths, making it a reliable solution for legacy industrial drives. Designed with a robust package layout, this dual Darlington module features a maximum thermal resistance Rth(j-c) of 0.125°C/W. Key advantages include its high electrical isolation voltage and a durable peak current capability. For engineers replacing legacy inverter stages, the 2DI150M-120 provides a drop-in 1200V, 150A configuration, resolving the problem of sourcing reliable legacy spare parts with built-in fast recovery diodes.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The following table outlines the absolute maximum ratings and electrical characteristics for the 2DI150M-120, grouped by function to assist hardware designers with thermal and electrical budget planning.

Specification Group Parameter Symbol Value / Rating
Voltage Limits Collector-Emitter Voltage (VCES / VCEO(sus)) 1200V
Emitter-Base Voltage (VEBO) 7V
Current Limits Continuous Collector Current (IC) 150A
Peak Collector Current (ICP, 1ms) 300A
Continuous Base Current (IB) 9A
Thermal Ratings Max Power Dissipation (PC) 1000W
Operating Junction Temperature (Tj) +150°C
Safety & Isolation Isolation Voltage (Visol) 2500V AC (1 min)

Download the 2DI150M-120 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Heavy-Duty Power Conversion

For heavy-duty motor drives requiring 1200V blocking with high startup torque, the Fuji Electric 2DI150M-120 is the optimal choice.

Engineers maintaining older industrial welding power supplies often encounter startup overload issues. A sudden spike in current can push semiconductors past their safe operating limits. By utilizing the 2DI150M-120, system designers benefit from a peak current rating of 300A. This transient tolerance prevents failure during initial weld strikes, preserving system uptime.

Additionally, the module fits seamlessly into legacy uninterruptible power supply (UPS) systems and AC motor controls. While this module is ideal for 1200V Darlington replacements, for three-phase motor drive applications requiring modern IGBT technology, the related 2MBI150VB-120-50 offers a 150A 1200V rating in a standard trench IGBT package. For smaller 150A load requirements operating on a lower 600V bus, the related 6DI150AH-060 provides a six-pack Darlington configuration.

Technical Deep Dive

Analyzing the Dual Darlington Topology and Built-in Free Wheeling Diode

The 2DI150M-120 consists of two NPN Darlington transistors in a single housing. This structure provides high current amplification, reducing the drive current required from control circuitry. The integration of a fast recovery antiparallel diode across each collector-emitter junction ensures inductive energy is recirculated safely. Bipolar Darlington transistors feature a low on-state voltage drop, which minimizes conduction losses in low-frequency switching environments.

To put this in perspective, just as a mechanical check valve ensures fluid flows in only one direction to prevent pressure buildup, the built-in free-wheeling diode redirects reverse current spikes away from the fragile transistor junctions during turn-off cycles. Understanding the difference between bipolar junction transistors and newer devices is key for power semiconductor selection in retrofitting designs. To compare these legacy structures with modern field-stop architectures, check out the in-depth analysis of IGBT modules.

What is the primary benefit of its insulated baseplate design? It simplifies heatsink mounting and ensures safe high-voltage isolation.

For details on the manufacturer's current power semiconductor roadmap, visit Fuji Electric.

Frequently Asked Questions

Addressing Key Engineering and Replacement Inquiries

How does the hFE gain of the 2DI150M-120 influence gate driver design compared to modern IGBTs?
Unlike voltage-controlled IGBTs, the 2DI150M-120 is a current-driven bipolar Darlington module. It requires a continuous base drive current (up to 9A) to maintain low saturation voltage. Engineers must ensure the driver circuit is designed to deliver continuous current, rather than just charging a gate capacitance.

What is the isolation rating of the 2DI150M-120, and why does it matter for industrial safety?
The module provides 2500V AC isolation between the internal terminals and the metal baseplate for 1 minute. This allows designers to bolt multiple modules onto a single, grounded heatsink without risking high-voltage breakdown, greatly reducing packaging complexity.

Contact our technical sales team today to check stock, request formal pricing, or obtain alternative solutions for your high-power design requirements.

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