Content last revised on November 23, 2025
2MBI200NE-120: A Fuji Electric 1200V/200A IGBT for High-Frequency Power Systems
Optimizing for Efficiency and Power Density in Demanding Applications
The Fuji Electric 2MBI200NE-120 is a dual IGBT module from the N-series, engineered to deliver high performance in demanding power conversion systems. With core specifications of 1200V and 200A, this module is distinguished by its low switching losses and an optimized free-wheeling diode (FWD). These characteristics enable the design of systems with higher operational efficiency and greater power density. A key advantage for engineers is the module's ability to facilitate higher switching frequencies, which directly contributes to reducing the size of magnetic components. For industrial applications requiring robust performance and minimized energy loss, the 2MBI200NE-120 provides a foundation for compact and efficient power stage design.
Application Scenarios & Value
Achieving System-Level Benefits in High-Frequency Power Conversion
The 2MBI200NE-120 is engineered for applications where both efficiency and a compact footprint are critical design criteria. For engineers developing high-power Uninterruptible Power Supplies (UPS), the module's low switching energy (Eon/Eoff) is a decisive parameter. This allows for an increase in the system's switching frequency without incurring excessive thermal penalties. What does this mean in a practical engineering scenario? A higher switching frequency enables the use of smaller, lighter, and more cost-effective inductors and capacitors in the filtering stage, directly increasing the power density of the entire UPS unit. This reduction in component size is crucial for data centers and industrial facilities where space is at a premium.
Similarly, in high-power AC motor controls and Variable Frequency Drives (VFDs), the module's low collector-emitter saturation voltage (VCE(sat)) of 2.2V (Typ) minimizes conduction losses. This translates to less waste heat, potentially simplifying the thermal management system and improving the overall reliability and operational expenditure of the motor drive. The module’s robust Safe Operating Area (SOA) ensures dependable performance under the demanding load conditions typical of industrial machinery. For systems demanding even greater current handling for larger motor drives, the related 2MBI300N-120 offers a 300A capability within a similar voltage class.
Key Parameter Overview
Decoding the Specs for Efficient Switching Performance
The technical specifications of the 2MBI200NE-120 are tailored to support high-speed and efficient power switching. Below is a summary of its key parameters, organized for clear engineering evaluation.
| Absolute Maximum Ratings (Tc=25°C) | |
|---|---|
| Parameter | Value |
| Collector-Emitter Voltage (Vces) | 1200V |
| Gate-Emitter Voltage (Vges) | ±20V |
| Continuous Collector Current (Ic) @ Tc=80°C | 200A |
| Pulsed Collector Current (Icp) | 400A |
| Power Dissipation (Pc) per IGBT | 1040W |
| Operating Junction Temperature (Tj) | +150°C |
| Electrical Characteristics (Tj=25°C) | |
|---|---|
| Parameter | Typical Value |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ Ic=200A, Vge=15V | 2.2V |
| Gate-Emitter Threshold Voltage (VGE(th)) | 6.5V |
| Turn-on Switching Loss (Eon) @ Tj=125°C | 28 mJ/pulse |
| Turn-off Switching Loss (Eoff) @ Tj=125°C | 32 mJ/pulse |
| FWD Forward Voltage (VEC) @ Ie=200A | 2.2V |
| Thermal Resistance, Junction to Case (Rth(j-c)) per IGBT | 0.12 °C/W |
Download the 2MBI200NE-120 datasheet for detailed specifications and performance curves.
Technical Deep Dive
Balancing Conduction and Switching Losses for Optimal Performance
A fundamental challenge in power electronics design is managing the trade-off between conduction losses (determined by VCE(sat)) and switching losses (determined by Eon/Eoff). The Fuji Electric N-series technology utilized in the 2MBI200NE-120 addresses this by optimizing the chip structure to achieve a low VCE(sat) without significantly compromising switching speed. This balance is critical for applications that operate across a range of load conditions and frequencies.
Think of the total energy loss in an IGBT as the fuel consumption of a delivery truck. Conduction loss is like the fuel burned while driving at a steady speed on the highway, whereas switching loss is the extra fuel consumed during the start-stop cycles in city traffic. For a high-frequency application, which involves many "start-stop" cycles, minimizing switching loss is paramount. The 2MBI200NE-120's low Eon and Eoff values (28 mJ and 32 mJ respectively) are akin to an efficient hybrid engine that wastes very little energy during transitions, making it ideal for the "city traffic" of high-frequency inverters. This efficiency directly reduces the heat that must be dissipated, allowing for a more compact thermal management solution. For a comprehensive understanding of loss mechanisms, resources like the introduction to switching losses provide valuable theoretical background.
Frequently Asked Questions (FAQ)
How do the low Eon/Eoff values of the 2MBI200NE-120 directly benefit high-frequency applications?
Low turn-on (Eon) and turn-off (Eoff) energy losses directly reduce the amount of heat generated during each switching cycle. In high-frequency systems (e.g., >10 kHz), where switching occurs thousands of times per second, this reduction is cumulative and substantial. It enables the system to run cooler, improves overall energy efficiency, and allows designers to increase the operating frequency to shrink the size of passive components like inductors and capacitors, thus increasing power density.
What is the significance of the VCE(sat) of 2.2V in system design?
The Collector-Emitter Saturation Voltage (VCE(sat)) is the primary determinant of conduction losses when the IGBT is fully on. A lower VCE(sat), like the 2.2V typical value for this module, means less power is dissipated as heat during the on-state. This is particularly important in applications with long duty cycles or high continuous currents, such as motor drives under sustained load, as it directly contributes to higher system efficiency and reduces the demands on the cooling system.
What are the key considerations for the gate drive circuit when using this high-speed IGBT module?
To fully leverage the fast switching capabilities of the 2MBI200NE-120, a well-designed gate drive circuit is essential. Key considerations include: providing a stable gate voltage (typically +15V for turn-on, -8V to -15V for turn-off) to ensure full enhancement and prevent spurious turn-on; using a low-inductance gate drive layout to minimize ringing; and selecting a gate driver with sufficient peak current capability to charge and discharge the IGBT's input capacitance quickly, ensuring clean and fast transitions.
For inquiries regarding the 2MBI200NE-120 or to discuss your specific design requirements, please contact our technical sales team for further assistance and to request a quote.
