#Fuji, #2MBI300UE_120, #IGBT_Module, #IGBT, 2MBI300UE-120 Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; 2MBI300UE-120
Manufacturer Part Number: 2MBI300UE-120Part Life Cycle Code: End Of LifeIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 450 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1660 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 370 nsTurn-on Time-Nom (ton): 360 ns Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-7