Content last revised on November 29, 2025
2MBI75VA-120-50 by Fuji Electric: A V-Series IGBT Module Engineered for High-Efficiency Power Conversion
The Fuji Electric 2MBI75VA-120-50 is a V-Series dual IGBT module designed to meet the stringent demands of modern power electronics. It delivers a finely tuned balance between conduction and switching losses, providing a robust foundation for high-efficiency power conversion systems. With core specifications of 1200V and 75A, this module offers exceptional thermal performance and high reliability. Its primary engineering benefits include increased system efficiency and simplified thermal management. For industrial drive applications requiring high power density and minimal energy waste, the 2MBI75VA-120-50's low VCE(sat) and optimized switching characteristics present a decisive advantage. For systems demanding higher current capabilities within a similar package, the 2MBI100VA-120-50 provides an increased current rating.
Key Parameter Overview
Decoding the Specs for Efficient Power Switching
The technical specifications of the 2MBI75VA-120-50 underscore its suitability for demanding, high-frequency applications. A deep understanding of these parameters is crucial for optimizing system design and ensuring long-term operational reliability.
| Parameter | Symbol | Value | Conditions |
|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25°C) | |||
| Collector-Emitter Voltage | VCES | 1200V | - |
| Gate-Emitter Voltage | VGES | ±20V | - |
| Continuous Collector Current | IC | 75A | Tc = 80°C |
| Pulsed Collector Current | ICP | 150A | 1ms pulse |
| Collector Power Dissipation | PC | 390W | Per device |
| Electrical Characteristics (Tj = 25°C unless otherwise specified) | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.95V (typ) / 2.40V (max) | IC = 75A, VGE = 15V |
| Gate-Emitter Threshold Voltage | VGE(th) | 6.0V to 7.0V | VCE = 20V, IC = 72mA |
| FWD Forward Voltage | VF | 1.80V (typ) / 2.25V (max) | IF = 75A, VGE = 0V |
| Thermal Characteristics | |||
| Thermal Resistance (Junction-to-Case) | Rth(j-c) | 0.32 K/W (IGBT), 0.50 K/W (FWD) | - |
Download the 2MBI75VA-120-50 datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Motor Drives
The 2MBI75VA-120-50 is an optimal choice for engineers designing high-performance Variable Frequency Drives (VFDs) and servo amplifiers. In a typical VFD application for a 15-22 kW industrial motor, the primary challenge is achieving high power conversion efficiency to meet energy standards and reduce operational costs, while simultaneously managing the thermal load in a compact enclosure. The module's low VCE(sat) of 1.95V (typical) directly translates to lower conduction losses, which are dominant during the motor's steady-state operation. What is the impact of its V-Series design? It provides an optimized balance between conduction and switching losses, crucial for efficiency across a wide range of operating speeds. This allows engineers to use smaller, more cost-effective heatsinks, thereby increasing the overall power density of the drive. The integrated fast, soft-recovery freewheeling diode (FWD) further minimizes switching losses and reduces electromagnetic interference (EMI), simplifying system-level compliance with standards like IEC 61800-3.
Technical Deep Dive
Inside Fuji's V-Series: Balancing Power and Efficiency
The performance of the 2MBI75VA-120-50 is rooted in Fuji Electric's advanced V-Series (5th Generation) technology. This design utilizes a Carrier Stored Trench Gate Bipolar Transistor (CSTBT™) structure. This innovative chip architecture is key to overcoming the traditional trade-off between conduction losses (VCE(sat)) and switching losses (Eon/Eoff). Think of it like tuning a high-performance engine: you can't just maximize horsepower without considering fuel economy. Similarly, drastically lowering VCE(sat) often leads to slower switching and higher energy loss during transitions. Fuji's V-Series technology optimizes the carrier concentration within the chip, allowing for a low on-state voltage while maintaining the fast switching speeds necessary for PWM frequencies used in modern motor control. This results in lower total power loss, which is the sum of both conduction and switching losses, leading to a more efficient and thermally stable inverter.
Frequently Asked Questions
How does the V-Series technology in the 2MBI75VA-120-50 contribute to lower power consumption?
The V-Series technology employs an advanced chip structure that significantly reduces both conduction losses (VCE(sat)) and switching energy. This dual improvement minimizes the total energy dissipated as heat during operation, directly leading to higher inverter efficiency and lower overall power consumption for the end application, such as a Variable Frequency Drive (VFD).
What is the significance of the module's thermal resistance, Rth(j-c), in practical design?
The thermal resistance from junction to case (Rth(j-c)) is a critical parameter for thermal design. A lower value, like the 0.32 K/W for the IGBT in this module, indicates a more efficient path for heat to travel from the active silicon chip to the module's baseplate. For a design engineer, this means the chip will operate at a lower temperature for a given power loss, which directly enhances the system's reliability and lifespan. It also allows for more thermal margin or the use of a smaller heatsink, contributing to a more compact and cost-effective design. For a deeper understanding, refer to resources on IGBT thermal management.
For engineering teams looking to enhance the efficiency and power density of their next inverter design, the 2MBI75VA-120-50 offers a proven, reliable solution. To evaluate this component for your application, please submit a request for quotation through our website.
