Content last revised on November 9, 2025
Fuji Electric 2MBI100VA-120-50 | V-Series IGBT for High-Efficiency Power Conversion
The Fuji Electric 2MBI100VA-120-50 is a 1200V, 100A half-bridge (2-in-1) IGBT module engineered for demanding power conversion applications. As a cornerstone of Fuji's 6th generation V-Series, this module integrates advanced chip and packaging technology to deliver a superior balance of low power loss, high reliability, and soft-switching performance. It is an ideal solution for engineers designing high-frequency motor drives, uninterruptible power supplies (UPS), and solar inverters where efficiency and thermal stability are critical design parameters.
Technical Deep Dive: The V-Series Advantage
V-Series CSTBT™ for Unmatched Low Conduction Loss
At the heart of the 2MBI100VA-120-50 is Fuji's proprietary Carrier Stored Trench-gate Bipolar Transistor (CSTBT™) technology. Unlike conventional trench-gate IGBTs, the CSTBT™ structure features a carrier-stored layer beneath the N+ buffer. This innovation enhances conductivity modulation during the on-state, significantly reducing the collector-emitter saturation voltage (Vce(sat)). For the end-user, this translates directly into lower conduction losses, meaning less heat generated and higher overall system efficiency, a crucial factor in applications with high duty cycles.
Optimized FWD for Soft and Fast Switching
This module incorporates a co-packaged Free Wheeling Diode (FWD) specifically optimized for soft recovery characteristics. A soft-recovery diode exhibits a less abrupt turn-off, which drastically reduces reverse recovery current (Irr) and voltage overshoot (dv/dt). This feature not only minimizes turn-on losses in the IGBT but also reduces electromagnetic interference (EMI). As a result, designers can often simplify or downsize snubber circuits and EMI filters, saving board space and component cost.
Multi-Dimensional Application Value
- Industrial Motor Drives: In variable frequency drives (VFDs) and servo control, the low total power loss (conduction and switching) of the 2MBI100VA-120-50 allows for higher switching frequencies. This leads to reduced motor noise, lower torque ripple, and more precise control, while the excellent thermal performance ensures reliability under heavy load conditions.
- Uninterruptible Power Supplies (UPS): The module's high efficiency is paramount in UPS systems, as it directly impacts operating costs and battery backup time. Its robust build and stable thermal characteristics guarantee dependable operation during critical power transitions.
- Solar & Wind Power Inverters: For renewable energy systems, maximizing energy harvest is key. The exceptionally low IGBT Vce(sat) ensures minimal power is wasted during the DC-AC inversion process, increasing the overall yield of the solar or wind installation.
- Welding Equipment: The fast and soft switching capabilities enable advanced control in high-frequency welding inverters, resulting in a more stable arc and higher-quality welds.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) @ Tc=80°C | 100 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) typ. @ IC=100A | 1.70 V |
| Maximum Junction Temperature (Tj(max)) | 175 °C |
| Package Type | M236 |
| Internal Configuration | Half-Bridge (2-in-1) |
For complete details, please refer to the official 2MBI100VA-120-50 Datasheet.
Industry Insight & Competitive Edge
The industry's relentless drive for higher power density and stricter efficiency standards (like 80 PLUS Titanium for server power) puts immense pressure on power semiconductor performance. The Fuji Electric 2MBI100VA-120-50 directly addresses this trend. While older IGBT generations often forced a trade-off between low conduction loss and fast switching speed, Fuji's V-Series effectively minimizes both. This balanced performance makes it a more versatile and future-proof choice compared to modules optimized for only one operating condition, offering a competitive advantage in modern, high-performance power electronics design. For more options, you can explore more IGBT Modules on our platform.
Frequently Asked Questions (FAQ)
- What is the recommended gate drive voltage for this module?
For optimal performance and to ensure full saturation while staying within safe limits, a gate-emitter voltage (Vge) of +15V for turn-on and -15V to 0V for turn-off is recommended. Always consult the datasheet for precise Vge(th) and maximum ratings. - Does the 2MBI100VA-120-50 require specific thermal interface material (TIM)?
While the module features excellent thermal conductivity, using a high-quality thermal grease or phase-change material is crucial for minimizing thermal resistance between the module's baseplate and the heatsink. Proper application is key to achieving long-term IGBT reliability.
If you have further questions or require a quote for the Fuji Electric 2MBI100VA-120-50, please do not hesitate to contact us for a quote.
