The 7MBR100U4B120 is an Insulated Gate Bipolar Transistor (IGBT) module designed by Fuji Electric Co Ltd. It features a collector current rating of 100A and a collector-emitter voltage rating of 1200V. This N-channel IGBT module comes in a RoHS-compliant package with 24 pins.
Key Specifications:
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Package Description: Flange Mount, R-XUFM-X24
Pin Count: 24
Case Connection: Isolated
Package Style: Flange Mount
Polarity/Channel Type: N-Channel
Number of Elements: 7
Terminal Position: Upper
Applications:
Industrial motor drives
Inverters and converters
Power electronic systems
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :100A
Collector current Icp 1ms Tc=25°C :200A
Collector power dissipation Pc:390W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *3 N·m
