#Rohm Semiconductor, #2SD1763AE, #IGBT_Module, #IGBT, 2SD1763AE Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, T
Manufacturer Part Number: 2SD1763AEPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPart Package Code: TO-220FPPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: ROHM SemiconductorRisk Rank: 5.74Case Connection: ISOLATEDCollector Current-Max (IC): 1.5 ACollector-Emitter Voltage-Max: 160 VConfiguration: SINGLEDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 80 MHz Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN