#FUJI, #6MBI15S_120, #IGBT_Module, #IGBT, 6MBI15S-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel; 6MBI15S-120
Manufacturer Part Number: 6MBI15S-120Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Collector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 530 nsTurn-on Time-Nom (ton): 600 ns Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel