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FUJI 7MBR75SB060

  • 7MBR75SB060

7MBR75SB060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

· Categories: IGBT
· Manufacturer: FUJI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 288
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Content last revised on January 7, 2025

Features
• Low VCE(sat)
• Compact package
• P.C. board mount
• Converter diode bridge, Dynamic brake circuit

Applications
• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible power supply

Maximum ratings and characteristics
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Tc=25°C :150A
Collector power dissipation Pc:200W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m

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