#APT, #APT10026JN, #IGBT_Module, #IGBT, APT10026JN 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4; APT10026JN
Manufacturer Part Number: APT10026JNRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ADVANCED POWER TECHNOLOGY INCPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 1000 VDrain Current-Max (Abs) (ID): 33 ADrain Current-Max (ID): 33 ADrain-source On Resistance-Max: 0.26 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 620 pFJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 690 WPower Dissipation-Max (Abs): 690 WPulsed Drain Current-Max (IDM): 132 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4