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APT APT50GF120JRDQ3 IGBT Module

#APT, #APT50GF120JRDQ3, #IGBT_Module, #IGBT, APT50GF120JRDQ3 Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT50GF120JRDQ3

· Categories: IGBT Module
· Manufacturer: APT
· Price: US$
· Date Code: 11+
. Available Qty: 334
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APT50GF120JRDQ3 Specification

Sell APT50GF120JRDQ3, #APT #APT50GF120JRDQ3 Stock, APT50GF120JRDQ3 Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT50GF120JRDQ3, #IGBT_Module, #IGBT, #APT50GF120JRDQ3
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Manufacturer Part Number: APT50GF120JRDQ3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 2.15Case Connection: ISOLATEDCollector Current-Max (IC): 120 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4

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