#APT, #APT50GF120JRDQ3, #IGBT_Module, #IGBT, APT50GF120JRDQ3 Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT50GF120JRDQ3
Manufacturer Part Number: APT50GF120JRDQ3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 2.15Case Connection: ISOLATEDCollector Current-Max (IC): 120 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4