Toshiba MG400Q1US41 IGBT Module

#MG400Q1US41 Description
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:800A
Collector power dissipation Pc:2400W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque (Terminal:M4/M6/Mounting)2/3/3 N·m
High power switching applications.IGBT: 400A 1200V