#APT, #APTGF330A60D3G, #IGBT_Module, #IGBT, APTGF330A60D3G Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7; APTGF330A60D3G
Manufacturer Part Number: APTGF330A60D3GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 460 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1560 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7