#Microsemi Power Products Group, #APTGF75H120TG, #IGBT_Module, #IGBT, APTGF75H120TG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-14; A
Manufacturer Part Number: APTGF75H120TGPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X14Pin Count: 14ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.14Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X14JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-14