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Microsemi APTGT100DA120D1G IGBT Module

APTGT100DA120D1G

APTGT100DA120D1G Microsemi Insulated Gate Bipolar Transistor, 150A 1200V N-Channel, ROHS COMPLIANT PIN;

· Categories: IGBT Module
· Manufacturer: Microsemi
· Price: US$
· Date Code: 2024+
. Available Qty: 537
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APTGT100DA120D1G Specification

Application

•AC and DC motor control

•Switched Mode Power Supplies

•Power Factor Correction

Features

•Trench + Field Stop IGBTTechnology

-Low voltage drop

-Low tail current

-Switching frequency up to 20 kHz

-Soft recovery parallel diodes

-Low diode VF

-Low leakage current

-RBSOA and SCSOA rated

•Kelvin emitter for easy drive

•High level of integration

•M5 power connectors

Benefits

•Outstanding performance at high frequency operation

•Stable temperature behavior

•Very rugged

•Direct mounting to heatsink (isolated package)

•Low junction to case thermal resistance

•Easy paralleling due to positive TC of VCEsat

•RoHS Compliant

Absolute maximum ratings

VCES Collector - Emitter Breakdown Voltage 1200V

IC Continuous Collector Current TC = 25°C 150A

IC Continuous Collector Current TC = 80°C 100A

ICM Pulsed Collector Current TC = 25°C 200A

VGE Gate-Emitter Voltage ±20 V

PD Maximum Power Dissipation TC = 25°C 520W

RBSOA Reverse Bias Safe Operating Area Tj = 125°C 200A@1100V

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