Microsemi Power Products Group APTGT35H120T1G IGBT Module

Manufacturer Part Number: APTGT35H120T1GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: ROHS COMPLIANT, SP1, 12 PINPin Count: 12Manufacturer: Microsemi CorporationRisk Rank: 5.67Case Connection: ISOLATEDCollector Current-Max (IC): 55 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-T12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 208 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN