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Mitsubishi QM30DY-H IGBT Module

Mitsubishi QM30DY-H: A robust 600V/30A Darlington module. High gain simplifies drive circuitry and its isolated package ensures rugged reliability for industrial motor control and power supplies.

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 130
· Date Code: 2016+
. Available Qty: 667
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QM30DY-H Specification

Mitsubishi QM30DY-H | Robust 600V/30A Darlington Module for Industrial Control

The Mitsubishi QM30DY-H is a high-reliability power transistor module engineered for enduring performance in demanding industrial applications. While often grouped with modern switching devices, it's crucial for design engineers to recognize this component for what it is: a highly effective Darlington transistor module. This distinction is key to leveraging its unique strengths in cost-sensitive and ruggedized power conversion systems. It is a testament to proven technology, offering a straightforward and robust solution for motion control and power supply designs.

Key Performance Highlights

The QM30DY-H is engineered for reliability and ease of integration. Its design philosophy centers on providing a dependable switching component for low-to-medium frequency applications where durability is paramount.

  • Robust Darlington Pair: Features a dual NPN transistor configuration providing very high DC current gain (hFE), which simplifies the base drive circuitry compared to driving a single BJT.
  • Industrial-Grade Voltage & Current: With a collector-emitter voltage (Vces) of 600V and a continuous collector current (Ic) of 30A, it is well-suited for a wide range of 200-240V AC line applications.
  • Integrated Freewheeling Diode: Includes a co-packaged freewheeling diode across the collector and emitter, essential for managing inductive loads found in motor control without requiring external components.
  • Electrically Isolated Package: The module is mounted on an electrically isolated baseplate (2500V AC for 1 minute), simplifying thermal management by allowing direct mounting to a common heatsink.

Core Technical Specifications

For engineers requiring a quick assessment, the following table outlines the critical parameters of the Mitsubishi QM30DY-H. For a complete dataset, you can download the official QM30DY-H datasheet.

ParameterValue
Collector-Emitter Voltage (VCES)600 V
Collector Current (IC)30 A
Collector-Emitter Saturation Voltage (VCE(sat))2.5 V (Max)
DC Current Gain (hFE)75 (Min)
Isolation Voltage (Visol)2500 V (AC, 1 minute)

Application Scenarios & Engineering Value

The QM30DY-H excels in applications where extreme switching speeds are secondary to robustness, reliability, and design simplicity.

  • Small AC/DC Motor Drives: Its inherent ruggedness makes it ideal for controlling small industrial motors, conveyors, and pumps. The integrated freewheeling diode provides essential protection against back-EMF from inductive motor windings.
  • Welding Power Supplies: In older or simpler welding designs, the QM30DY-H can serve as a durable switching element capable of handling the pulsed, high-current demands of the application.
  • Uninterruptible Power Supplies (UPS): A perfect fit for the inverter stage of line-interactive or offline UPS systems, where its reliability ensures backup power is always available.
  • General-Purpose Servo Drive Control: Suitable for basic servo applications that do not require the high dynamic response enabled by modern IGBT modules but benefit from a cost-effective and easy-to-implement power stage.

Strategic Positioning: Darlington vs. IGBT

Choosing the right power switch is a critical design decision. While modern IGBTs offer lower saturation voltages and faster switching, the Mitsubishi QM30DY-H holds its ground for specific use cases. Understanding the trade-offs is key. For a comprehensive comparison of different switching technologies, see our guide to power semiconductor selection.

  • Choose the QM30DY-H when: Your primary concerns are system cost, design simplicity, and robustness in electrically noisy environments. Its high gain simplifies the drive circuit, and its slower switching can sometimes generate less high-frequency EMI.
  • Consider an IGBT when: Your application requires high efficiency (low VCE(sat) and switching losses) and operates at higher frequencies (typically >5 kHz) to enable smaller magnetic components and improved control dynamics.

Frequently Asked Questions (FAQ)

Q1: Is the QM30DY-H a drop-in replacement for an IGBT module with similar ratings?

A: No, it is not. The QM30DY-H is a current-controlled Darlington transistor, meaning it requires a continuous base current to remain in the 'on' state. An IGBT is a voltage-controlled device, requiring a specific voltage at its gate. The drive circuitry for these two components is fundamentally different and not interchangeable.

Q2: What is the primary advantage of the Darlington configuration in this module?

A: The main advantage is its very high DC current gain (hFE). This allows a small current from a control circuit to switch a much larger load current (30A in this case). This simplifies the driver stage, reducing component count and potentially system cost, a key benefit from the established Mitsubishi power device lineage.

For detailed application support or to discuss how the QM30DY-H can fit into your next project, please contact our technical team for expert guidance.

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