POSEICO AT655S22 | Engineered for Durability in 1200V High-Power Systems
The POSEICO AT655S22 is a high-voltage single-switch IGBT module designed for resilience and stable performance in demanding power conversion applications. With its robust 1200V blocking voltage and a 35A current rating, this component is a workhorse for engineers developing or maintaining industrial systems that prioritize reliability over extreme switching speeds. Its construction is focused on providing long operational life under tough electrical and thermal conditions.
- High Voltage Headroom: The 1200V VCES rating provides a substantial safety margin for systems operating on 380/480V AC lines, effectively mitigating risks from voltage transients and inductive load spikes.
- Robust Construction: Housed in a standard industrial package with screw terminals, the AT655S22 ensures secure mechanical and electrical connections, vital for environments with high vibration or shock.
- Optimized for Conduction: With a typical VCE(sat) of 3.5V at its nominal current, this module is engineered for applications where conduction losses are the primary consideration, typical of lower-frequency operation.
- Single Switch (Chopper) Topology: Its straightforward configuration simplifies circuit design for applications like DC choppers, brake circuits, and single-phase power control.
Key Technical Specifications
The following parameters represent the core operational characteristics of the POSEICO AT655S22. For a comprehensive list of specifications and performance curves, you can download the official AT655S22 datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC @ Tc=25°C) | 35 A |
| Collector-Emitter Saturation Voltage (VCE(sat), Typ @ IC=22A) | 3.5 V |
| Total Power Dissipation (Ptot @ Tc=25°C) | 200 W |
| Gate-Emitter Voltage (VGES) | ±20 V |
| Operating Junction Temperature (Tj) | -40 to +150 °C |
Application Scenarios & Engineering Value
The POSEICO AT655S22 excels where durability is paramount. Its design DNA makes it a prime candidate for the following high-power industrial applications:
- Industrial Motor Drives: In Variable Frequency Drive (VFD) brake chopper circuits, its high voltage rating safely absorbs the regenerative energy from a decelerating motor, protecting the main DC bus from overvoltage conditions.
- Welding Power Supplies: The module's thermal mass and robust electrical characteristics can withstand the pulsed, high-current demands of welding applications, ensuring consistent power delivery for quality welds.
- Induction Heating Systems: For lower-frequency induction heaters, the AT655S22 provides reliable power switching, where its strong performance in handling conduction losses contributes to overall system efficiency.
- UPS and Power Supply Systems: It serves as a dependable switch in boost converters or as a primary switching element in uninterruptible power supplies, where long-term reliability is a non-negotiable requirement.
An Engineer's Perspective on the AT655S22
The Critical Role of 1200V Blocking Voltage
In power electronics, the rated VCES is more than just a number; it's a direct measure of the device's resilience. For the AT655S22, the 1200V rating is a critical feature for designers working with 3-phase 400V or 480V AC mains. After rectification, this results in a DC bus voltage of 560-680V. The 1200V IGBT provides the necessary design margin to handle voltage overshoots caused by stray inductance during switching events, ensuring the device remains within its Safe Operating Area (SOA) and dramatically improving system lifetime.
Technical FAQ for the AT655S22
What are the optimal gate drive conditions for this module?
To ensure reliable switching and prevent spurious turn-on, a robust gate drive circuit is essential. A typical configuration for a module like the AT655S22 uses a bipolar supply, such as +15V for turn-on and a negative voltage (e.g., -5V to -15V) for turn-off. Using a Negative Gate Voltage provides a strong buffer against the Miller effect, especially in noisy industrial environments, preventing accidental turn-on and potential shoot-through failures in half-bridge configurations.
Is this IGBT suitable for high-frequency applications like modern EV inverters?
The POSEICO AT655S22 is specifically optimized for low-to-medium switching frequencies, typically in the range of a few kilohertz (1-10 kHz). Its relatively higher VCE(sat) indicates that it prioritizes conduction performance and robustness over minimizing Switching Loss. For high-frequency designs ( >20 kHz) like advanced EV inverters or resonant converters, newer generation IGBTs or SiC modules would be a more suitable choice. The AT655S22's strength lies in its core application space: industrial drives, welders, and rugged power supplies. For a detailed comparison of power semiconductor technologies, see our guide on IGBT vs. MOSFET selection.
For application-specific design support or to inquire about sourcing the AT655S22 for your project, please contact our technical team.
