#NXP Semiconductors, #BLP8G21S_160PVY, #IGBT_Module, #IGBT, BLP8G21S-160PVY RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconducto
Manufacturer Part Number: BLP8G21S-160PVYRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-PDFP-F6ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.39Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJESD-30 Code: R-PDFP-F6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, HSOP6F, 6 PIN