#Mitsubishi, #QM150DY_HB, #IGBT_Module, #IGBT, QM150DY-HB IGBT Power Transistor Modules 150A/1200V/GTR/2U;
QM150DY-HB Description IGBT Power Transistor Modules 150A/1200V/GTR/2U • Part Number: QM150DY-HB • IC Collector current ........................ 100A • VCEX Collector-emitter voltage ........... 1200V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized • Isolation voltage Charged part to case, AC for 1 minute 2500V • Collector dissipation TC=25°C........ 800W • Junction temperature Tj ...................+150°C • Storage temperature Tstg..............-40 to +125°C • Mounting screw torque ....................3.0 *1 N·m • Typical value Weight .....................470g IGBT Power Transistor Modules 150A/1200V/GTR/2U